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APT12067JFLL
1200V 17A 0.670
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT12067JFLL UNIT Volts Amps
1200 17 68 30 40 463 3.70 -55 to 150 300 17 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.670 250 1000 100 3 5
(VGS = 10V, ID = 8.5A)
Ohms A nA Volts
2-2004 050-7089 Rev B
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT12067JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 18A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 18A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V ID = 18A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 800V, VGS = 15V ID = 18A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4420 660 115 150 20 95 22 19 22 19 705 302 1239 402
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
17 68 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -ID 18A)
dv/ 5 dt
t rr
Reverse Recovery Time (IS = -ID 18A, di/dt = 100A/s) Reverse Recovery Charge (IS = -ID 18A, di/dt = 100A/s) Peak Recovery Current (IS = -ID 18A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.0 6.0 13 21
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.30
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 17.30mH, RG = 25, Peak IL = 17A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID17A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
PDM t1 t2
2-2004
0.10
0.3
JC
050-7089 Rev B
Z
0.05 0 10-5
0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
40
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT12067JFLL
VGS =15,10 & 8V 35 6.5V 30 6V 25 20 15 10 5 0 5V 4.5V 5.5V 7V
0.0497
0.0256F
Power (watts)
0.180
0.419F
0.0393 Case temperature. (C)
12.8F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
50 45
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C
NORMALIZED TO = 10V @ I = 8.5A
D
40 35 30 25 20 15 10 05 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 18 16 TJ = +125C TJ = +25C
1.30 1.20 VGS=10V 1.10
1.00
VGS=20V
0.90 0.80
0
10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
5
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.10
14 12 10 8 6 4 2 0
1.05 1.00
0.95 0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 8.5A = 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
2.0
1.1
1.0 0.9 0.8
2-2004
1.5
1.0
0.5
0.7 0.6
0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
050-7089 Rev B
68
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 5,000
C, CAPACITANCE (pF)
APT12067JFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
100S
1,000 500 Coss
10
5 1mS TC =+25C TJ =+150C SINGLE PULSE
100
Crss
10mS 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I
D
200 100
= 18A
12 VDS=240V 8 VDS=600V
TJ =+150C TJ =+25C 10
VDS=960V
4
0 20 40 60 80 100 120 140 160 180 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off) 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50
V
DD G
1
= 800V
R
= 5
T = 125C
J
L = 100H V
DD G
td(on) and td(off) (ns)
= 800V
tr and tf (ns)
100 80 60 40 20 0 0
40 tf 30
R
= 5
T = 125C
J
L = 100H
20 tr td(on) 20 30 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0
10
15 20 25 30 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000
V
DD
0
5
10
2000
= 800V R = 5
= 800V
T = 125C
J
Eon
SWITCHING ENERGY (J)
I
D J
= 18A
2500
T = 125C L = 100H EON includes diode reverse recovery
1500
Eon and Eoff (J)
L = 100H EON includes diode reverse recovery
2000 1500
1000
Eon
1000 Eoff
2-2004
500 Eoff 0 15 20 25 30 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10
500 0
050-7089 Rev B
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT12067JFLL
10%
Gate Voltage TJ125C
90% Gate Voltage TJ125C
td(on) tr
5% 10% Switching Energy 90% 5% Drain Voltage Drain Current
td(off) tf
90% 10% Drain Current 0 Switching Energy Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60D120B
V CC
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7089 Rev B
2-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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